These are made from different elements combined in various ratios, such as Gallium Arsenide (GaAs) and Gallium Nitride (GaN). They possess higher electron mobility and consequently better electronic properties than traditional silicon.
These are made from different elements combined in various ratios, such as Gallium Arsenide (GaAs) and Gallium Nitride (GaN). They possess higher electron mobility and consequently better electronic properties than traditional silicon.