- "Nanoelectronics refers to the use of nanotechnology in electronic components."
It deals with the design, fabrication, and integration of electronic devices and circuits at the nanoscale.
- "Some of these candidates include: hybrid molecular/semiconductor electronics, one-dimensional nanotubes/nanowires (e.g. silicon nanowires or carbon nanotubes) or advanced molecular electronics."
- "Nanoelectronic devices have critical dimensions with a size range between 1 nm and 100 nm."
- "Recent silicon MOSFET technology generations are already within this regime, including 22 nanometers CMOS (complementary MOS) nodes and succeeding 14 nm, 10 nm and 7 nm FinFET generations."
- "Nanoelectronics is sometimes considered as disruptive technology because present candidates are significantly different from traditional transistors."
- "The common characteristic [of nanoelectronics] is that they are so small that inter-atomic interactions and quantum mechanical properties need to be studied extensively."
- "They are so small that inter-atomic interactions and quantum mechanical properties need to be studied extensively."
- "Present candidates are significantly different from traditional transistors."
- "MOSFET stands for metal–oxide–semiconductor field-effect transistor, or MOS transistor."
- "One-dimensional nanotubes/nanowires (e.g. silicon nanowires or carbon nanotubes)."
- "Nanoelectronic devices have critical dimensions with a size range between 1 nm and 100 nm."
- "Hybrid molecular/semiconductor electronics."
- "Recent silicon MOSFET technology generations are already within this regime, including 22 nanometers CMOS (complementary MOS) nodes and succeeding 14 nm, 10 nm and 7 nm FinFET generations."
- "Nanoelectronic devices have critical dimensions with a size range between 1 nm and 100 nm."
- "The term covers a diverse set of devices and materials, with the common characteristic that they are so small that inter-atomic interactions and quantum mechanical properties need to be studied extensively."
- "Present candidates are significantly different from traditional transistors."
- "Hybrid molecular/semiconductor electronics, one-dimensional nanotubes/nanowires (e.g. silicon nanowires or carbon nanotubes) or advanced molecular electronics."
- "Recent silicon MOSFET technology generations are already within this regime, including 22 nanometers CMOS (complementary MOS) nodes and succeeding 14 nm, 10 nm and 7 nm FinFET generations."
- "Nanoelectronics is sometimes considered as disruptive technology because present candidates are significantly different from traditional transistors."
- "Advanced molecular electronics."